Mirror device

ABSTRACT

A mirror device comprises: an electrode which is covered with a protective film made of a material containing a semiconductor material and is placed on a substrate; a mirror placed above the electrode; and an electrically conductive hinge placed between the mirror and the electrode, wherein an opening part is formed in a part of the protective film, and the hinge penetrates the protective film in the opening part thereof.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is Continuation in Part (CIP) Application of aCo-Pending patent application Ser. No. 11/894,248 filed on Aug. 18, 2007by one of the common Inventors of this patent application. ApplicationSer. No. 11/894,248 is a Non-provisional application of a Provisionalapplication 60/841,173 filed on Aug. 30, 2006. The ProvisionalApplication 60/839,637 is a Continuation in Part (CIP) Application of apending U.S. patent application Ser. Nos. 11/121,543 filed on May 4,2005. The application Ser. No. 11/121,543 is a Continuation in part(CIP) Application of three previously filed Applications. These threeApplications are U.S. application Ser. Nos. 10/698,620 filed on Nov. 1,2003, 10/699,140 filed on Nov. 1, 2003, and 10/699,143 filed on Nov. 1,2003 by one of the Applicants of this patent application. Thedisclosures made in these patent applications are hereby incorporated byreference in this patent application.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a spatial light modulator (SLM)implemented with a mirror device for modulating incident light toproject images for an image display system. More particularly, thisinvention relates to a mirror device with structure to connect anelastic hinge supporting the mirror.

2. Description of the Related Art

Even though there are significant advances of the technologies forimplementing an electromechanical mirror device as a spatial lightmodulator (SLM) in recent years, there are still limitations anddifficulties when it is employed to display a high quality image.Specifically, when the images are digitally controlled, the imagequality is adversely affected due to the fact that the images are notdisplayed with sufficient number of gray scales.

An electromechanical mirror device is drawing a considerable interest asa spatial light modulator (SLM). The electromechanical mirror deviceconsists of a “mirror array” implemented with a large number of mirrorelements. In general, the mirror array may include from 60,000 toseveral millions of mirror elements arranged on a surface of a substratein an electromechanical mirror device.

Referring to FIG. 1A, an image display system 1 including a screen 2 isdisclosed in a reference U.S. Pat. No. 5,214,420. A light source 10 isused for generating light energy for illuminating the screen 2. Thegenerated light 9 is further concentrated and directed toward a lens 12by a mirror 11. Lenses 12, 13 and 14 form a beam columnator operative tocolumnate light 9 into a column of light 8. A spatial light modulator(SLM) 15 receives data input from a computer 19 via a bus 18 to controlthe micromirrors of the SLM for selectively reflecting and redirectingportions of light projected from a path 7 toward an enlarger lens andonto a screen 2. FIG. 1B shows a SLM 15 that has a mirror arrayconfigured as switchable reflective elements 17, 27, 37, and 47 eachincludes a mirror 33 supported on a hinge 30 extended from a surface 16of a substrate as the electromechanical mirror device. When the element17 is controlled to be in an ON position, a portion of the light fromthe path 7 is reflected and redirected along a path 6 to lens 5 where itis enlarged or spread along the path 4 to impinge on the screen 2 toform an illuminated pixel 3. When the element 17 is controlled to turnto an OFF position, the light is reflected away from the screen 2 andhence the pixel 3 is dark.

Therefore, the mirror device as shown comprises a plurality of mirrorelements to function as spatial light modulator (SLM) and each mirrorelement comprises a mirror and electrodes. A voltage applied to theelectrode(s) generates a coulomb force between the mirror and theelectrode(s). The signals applied to the electrodes therefore controland incline the mirror. The mirror element is “deflected” according to acommon term used in this specification for describing the operationalcondition of the mirror element.

When a voltage is applied to the electrode(s) the mirror is deflectedthe direction of the reflected light is changed in accordance with thedeflection angle of the mirror. The present specification refers to anON state of the mirror when most of the entirety of an incident light isreflected to a projection path designated for image display, and an OFFstate when the light reflected to a direction away from the designatedprojection path for image display.

Further, a state of the mirror is referred to as a specific ratio whenthe mirror reflects only a portion of an incident light at a specificratio relative to the ON light to the image projection path. The mirroris operated in this state when shifted between the ON state and the OFFstate. And that the light reflected to the projection path with asmaller quantity of light than the state of the ON light is referred toas an “intermediate light”.

The terminology of present specification defines an angle of rotationalong a clockwise (CW) direction as a positive (+) angle and that ofcounterclockwise (CCW) direction as negative (−) angle. A deflectionangle is defined as zero degree (0°) when the mirror is in the initialstate when there is no voltage applied to the electrode(s).

Most of the conventional image display devices such as the devicesdisclosed in U.S. Pat. No. 5,214,420 implements a dual-state mirrorcontrol that controls the mirrors in a state of either ON or OFF. Thequality of an image display is limited due to the limited number of grayscales. Specifically, in a conventional control circuit that applies aPWM (Pulse Width Modulation), the quality of the image is limited by theLSB (least significant bit) or the least pulse width as a controlrelated to the ON or OFF state. Since the mirror is controlled tooperate in either the ON or OFF state, the conventional image displayapparatus has no way to provide a pulse width for controlling the mirrorthat is shorter than the control duration allowable on the basis of theLSB. The least quantity of light, which is determined on the basis ofthe gray scale, is the light reflected during the time duration based onthe least pulse width. The limited number of gray scales leads to adegradation of the image.

Specifically, FIG. 1C exemplifies a control circuit for controlling amirror element according to the disclosure in the U.S. Pat. No.5,285,407. The control circuit includes a memory cell 32. Varioustransistors are referred to as “M*” where “*” designates a transistornumber and each transistor is an insulated gate field effect transistor.Transistors M5 and M7 are p-channel transistors; while transistors M6,M8, and M9 are n-channel transistors. The capacitances C1 and C2represent the capacitive loads in the memory cell 32. The memory cell 32includes an access switch transistor M9 and a latch 32 a, which is basedon a Static Random Access switch Memory (SRAM) design. The transistor M9connected to a Row-line receives a data signal via a Bit-line. Thememory cell 32 stores data for access is turned on when the transistorM9 receives a ROW signal on a Word-line. The latch 32 a consists of twocross-coupled inverters, i.e., M5/M6 and M7/M8, which permit two stablestates, that include a state 1 when Node A is high and Node is B low,and a state 2 when Node A is low and Node B is high.

The mirror is driven by a voltage applied to the address electrodeabutting an address electrode and is held at a predetermined deflectionangle on the address electrode. An elastic “landing chip” is formed at aportion on the address electrode. The address electrode contacts andstops the mirror when the mirror is deflected to a predefined angle. Themirror then deflects toward the opposite direction when a voltageapplied to the electrode is switched. The landing chip is designed tohave the same potential with the address electrode and that preventsshort circuit damages when the address electrode is in contact with themirror.

Each mirror formed on a device substrate has a square or rectangularshape and each side has a length of 4 to 15 μm. In this configuration, areflected light spreading outside of an angular ranges specificallydesigned for image display may inadvertently generated from the gapsbetween adjacent mirrors. The reflections generated from the gapsbetween the mirrors have an undesirable effect of degrading the contrastof an image display. As a result, the quality of the image display isadversely affected. In order to overcome such problems, the mirrors arearranged on a semiconductor wafer substrate with a layout to minimizethe gaps between the mirrors. A mirror device is generally designed toinclude an appropriate number of mirror elements wherein each mirrorelement is manufactured as a deflectable mirror on the substrate fordisplaying a pixel of an image. The appropriate number of elements fordisplaying image is in compliance with the display resolution standardaccording to a VESA Standard defined by Video Electronics StandardsAssociation or television broadcast standards. In the case in which themirror device has a plurality of mirror elements corresponding to Wideextended Graphics Array (WXGA), whose resolution is 1280 by 768, definedby VESA, the pitch between the mirrors of the mirror device is 10 μm andthe diagonal length of the mirror array is about 0.6 inches.

The control circuit as illustrated in FIG. 1C controls the mirrors toswitch between two states and the control circuit drives the mirror tooscillate to either the ON or OFF deflected angle (or position) as shownin FIG. 1A. The minimum quantity of light controllable to reflect fromeach mirror element for image display, i.e., the resolution of grayscale of image display for a digitally controlled image displayapparatus, is determined by the least length of time that the mirror iscontrollable to hold at the ON position. The length of time that eachmirror is controlled to hold at an ON position is in turn controlled bymultiple bit words. FIG. 1D shows the “binary time periods” in the caseof controlling an SLM by four-bit words. As shown in FIG. 1D, the timeperiods have relative values of 1, 2, 4, and 8 that in turn determinethe relative quantity of light of each of the four bits, where the “1”is least significant bit (LSB) and the “8” is the most significant bit.According to the Pulse Width Modulation (PWM) control mechanism, theminimum quantity of light that determines the resolution of the grayscale is a brightness controlled by using the “least significant bit”for holding the mirror at an ON position during a shortest controllablelength of time.

In a simple example with n-bit word for controlling the gray scale, oneframe time is divided into (2 n−1) equal time slices. If one frame timeis 16.7 msec., each time slice is 16.7/(2 n−1) msec.

With the minimum controllable time length set for each pixel in eachframe of the image, the quantity of light projected for a pixel isquantified as “0” time slice when a pixel is black with the quantity oflight set at zero. The image pixel projected with a “1” time slice isthe quantity of light represented by the LSB. The image pixel projectedwith 15 time slices, in the case of n=4, is the quantity of lightrepresented by the maximum brightness. Based on the above-quantifiedlight, the length of time that the mirror is held at the ON positionduring one frame period is determined by each pixel. Thus, each pixelcontrolled by a quantified value greater than “0” time slice, the mirroris held at the ON position according to the number of time slicescorresponding to its quantity of light during one frame period. Theviewer's eyes integrate the brightness of each pixel as if the imagewere generated with analog levels of light.

For controlling the deflectable mirror devices, the PWM applies the dataformatted into “bit-planes”. Each bit-plane corresponds to a bit weightof the quantity of light. Thus, when the brightness of each pixel isrepresented by an n-bit value, each frame of data has the n-bit planes.Then, each bit-plane has a “0” or “1” value for each mirror element.According to the PWM control scheme as described in the precedingparagraphs, each bit-plane is independently loaded and the mirrorelements are controlled on the basis of bit-plane values correspondingto the value of each bit within one frame. Specifically, the bit-planeaccording to the LSB of each pixel is displayed as a “1” time slice.Artifacts are shown between adjacent images pixels when adjacent imagepixels are displayed with great differences of quantity of lightapplying the gray scales having very coarse gray scales. That leads tothe degradations of image qualities. The degradations of image qualitiesare specially pronounced in bright areas of image when there are “biggergaps” of gray scale, i.e. quantity of light, between adjacent imagepixels. The artifacts are caused by a technical limitation that thedigitally controlled image display is not controlled by a sufficientnumber of gray scales, i.e. the levels of the quantity of light. Suchproblems are particularly caused by the fact that the mirrors arecontrolled either at the ON or OFF position. The quantity of light of adisplayed image is determined by the length of time each mirror is heldat the ON position. In order to increase the number of levels of thequantity of light, the switching speed of the ON and OFF positions forthe mirror must be increased. Consequently, the digital control signalsare required to have a higher number of bits. However, when theswitching speed of the mirror deflection is increased, a stronger hingefor supporting the mirror is necessary to sustain a required number ofswitches of the ON and OFF positions for the mirror deflection.Furthermore, a higher voltage applied to the electrode is required inorder to drive the mirrors provided with a strengthened hinge to the ONor OFF position. The higher voltage may exceed twenty volts and may evenbe as high as thirty volts. The mirrors produced by applying the CMOStechnologies probably is not appropriate for operating the mirror atsuch a high range of voltages, and therefore the DMOS mirror devices maybe required. In order to achieve a control of a higher number of grayscales, a more complicated production process and larger device areasare required to produce the DMOS mirror. Conventional mirror aretherefore faced with a technical difficulty that in order to produceimage display device with smaller size it may be necessary to sacrificehigh quality of image display with a higher level of gray scales due toa higher range of the operable voltages.

There are many patents related to the methods and device configurationsto control of quantity of light. These patents include the U.S. Pat.Nos. 5,589,852, 6,232,963, 6,592,227, 6,648,476, and 6,819,064. Thereare further patents and patent applications related to different sortsof light sources include the U.S. Pat. Nos. 5,442,414, 6,036,318 andApplication 20030147052. Also, The U.S. Pat. No. 6,746,123 has disclosedparticular polarized light sources for preventing the loss of light.However, these patents or patent applications do not provide aneffective solution to attain a sufficient number of the gray scales inthe digitally controlled image display system.

Furthermore, there are many patents related to a spatial lightmodulation that includes the U.S. Pat. Nos. 2,025,143, 2,682,010,2,681,423, 4,087,810, 4,292,732, 4,405,209, 4,454,541, 4,592,628,4,767,192, 4,842,396, 4,907,862, 5,214,420, 5,287,096, 5,506,597, and5,489,952. However, these inventions do not provide a direct solutionfor a person skilled in the art to overcome the above-discussedlimitations and difficulties.

In view of the above problems, an invention has disclosed a method forcontrolling the deflection angle of the mirror to express higher numberof gray scales of an image in a US Patent Application 20050190429. Inthis disclosure, the quantity of light obtained during the oscillationperiod of the mirror is about 25% to 37% of the quantity of lightobtained during the mirror is held on the ON position at all times.According to the improved control schemes, it is no longer necessary todrive the mirror at high speed. Therefore, it is possible to provide ahigher number of the gray scale while supporting the mirrors with mirrorhinges having a low elastic constant thus reducing the voltages appliedto the electrode(s) for controlling the mirrors

The image display apparatuses implemented with the mirror devicedescribed above can be broadly categorized into two types, i.e. asingle-plate image display apparatus equipped with only one spatiallight modulator, and a multi-plate image display apparatus equipped witha plurality of spatial light modulators. In the single-plate imagedisplay apparatus, a color image is displayed by periodically changingthe colors of light. In a multi-plate the image display apparatus, acolor image displayed by applying each of the spatial light modulatorsto modulate beams of light having different colors and continuouslycombining and projecting the modulated beams of different colors fromeach of these light modulators.

Recently, image display apparatuses of higher resolutions such as a fullhigh-definition (Full HD) image display with 1920 by 1080 pixels arerequired. These requirements demand further design and developmentimprovements of the image display systems in order to satisfy therequirements of a higher resolution display.

A mirror device used in such a display apparatus is generallyimplemented with a mirror array that includes two- to eight-millionmirror-elements arrayed as two-dimensional array on a device substrate.The mirror element of a typical mirror device is a square-shaped mirrorwith each side having a length of approximately 11 μm. A memory cell fordriving the mirror is formed near the mirror element on the substrate.The mirror is controlled by setting the operating voltage of the memorycell, or the drive voltage for deflecting the mirror, to “5” volts orhigher to deflect the mirror element supported on an elastic hinge.

A typical mirror device implemented for a full high definition (Full-HD)image display system has micromirrors that has a diagonal size of 24.13mm (0.95 inches) and a mirror pitch of 11 μm. The micromirrorsimplemented for a XGA display system has a diagonal size of 17.78 mm(0.7 inches) and a mirror pitch of 14 μm.

FIG. 2 is a diagonal view of a mirror device formed as two-dimensionalmicromirror array on a device substrate with each of the mirror elementscontrolled to deflect to different angles thus controlling a reflectiondirection of incident light.

The mirror device 200 shown in FIG. 2 includes a plurality of mirrorelements 300. Each mirror element is supported on an elastic mirrorhinge and controlled by a voltage applied to the address electrode (notspecifically shown). The mirror elements are configured as twodimensional mirror array on a device substrate 303. FIG. 2 shows aplurality of mirror elements 300 wherein each mirror element includes asquare mirror 302 and these mirror elements are configured with equalgaps between adjacent mirrors as two-dimensional array on the devicesubstrate 303. The mirror 302 is controllable by applying a voltage tothe address electrode disposed on the device substrate 303. FIG. 2 showsa deflection axis 201 for deflecting the mirror 302 as that indicated bythe dotted line. The light emitted from a light source 301 is incidentto the mirror 302 along an orthogonal or diagonal direction relative tothe deflection axis 201. The distance between the deflection axes 201between adjacent mirrors 302 is defined as the “pitch” and the distancebetween adjacent mirrors 302 is defined as the “gap”.

Specific descriptions of mirror operation are provided below byreferring to the cross-sectional line II-II of the mirror element 300 ofthe mirror device 200 shown in FIG. 2. FIGS. 3A and 3B arecross-sectional diagrams of the line II-II indicated in FIG. 2.

The mirror element 300 comprises a mirror 302, an elastic hinge 304 forsupporting the mirror 302, two address electrodes 307 a and 307 b. Theaddress electrodes are placed on two opposite sides across the mirror302. The mirror element further includes a first memory cell and asecond memory cell both for applying a voltage to the address electrodes307 a and 307 b in order to control the mirror 302 under a desireddeflection state.

The drive circuits for each memory cell are commonly formed in thedevice substrate 303 to control each memory cell in accordance with thesignal of image data. The control signals are applied to modulate themirror element for controlling the deflection angle of the mirror 302.

FIG. 3A is a cross-sectional diagram of a mirror element 300 controlledto operate in an ON state for reflecting incident light to a projectionoptical system by deflecting the mirror 300.

When a signal [0, 1] is applied to a memory cell, a voltage “0” (volts;“V”) is applied to the address electrode 307 a on one side and a voltageof Va (V) is applied to the address electrode 307 b on the other side.As a result, the mirror 302 is drawn by a coulomb force to deflect fromthe horizontal state toward the direction of the address electrode 307 bwith a voltage Va (V) applied thereto. This causes the incident lightemitted from a light source 301 to reflect to the projection opticalsystem on the mirror 302 (i.e. the ON light state). Note that aninsulation layer 306 is coated onto the device electrode 303, and ahinge electrode 305 connected to the elastic hinge 304 is groundedthrough a via connector (not specifically shown) placed in theinsulation layer 306.

FIG. 3B is a cross-sectional diagram of a mirror element 300 operated inan OFF state as the incident light is reflected away by deflecting themirror 302 from the image projection path. When a signal [1, 0] isapplied to a memory cell, a voltage Va (V) is applied to the addresselectrode 307 a on one side and a voltage of “0” (V) is applied to theaddress electrode 307 b on the other side. As a result, the mirror 302is drawn by a coulomb force to deflect from the horizontal positiontoward the direction of the address electrode 307 a with a voltage Va(V) applied thereto. This causes the incident light to reflect away fromthe image projection light path thus controlling the mirror to operatein an OFF light state.

Incidentally, the Coulomb force generated between the mirror 302 andaddress electrode 307 a, or 307 b, is expressed by the followingexpression:

$\begin{matrix}{{F = {k^{\prime}\frac{{eS}^{2}V^{2}}{2\; h^{2}}}};} & (1)\end{matrix}$

where “S” is the area size of the address electrode 307 a or 307 b, “h”is the distance between the mirror 302 and address electrode 307 a or307 b, “e” is the permittivity between the mirror 302 and addresselectrode 307 a or 307 b, “V” is the voltage applied to the addresselectrode 307 a or 307 b, and “k′” is a correction coefficient.

FIG. 4 is a cross-sectional diagram for showing the optical paths of theincident light projected to a mirror device 200. In the mirror device200 shown in FIG. 4, each of the mirror elements 300 includes a mirror302 supported by a hinge 304 juxtaposed on the device substrate 303contained in a package 308. The package 308 is in the shape of a hollowrectangle with an open top and the top is covered with a cover glass 309allowing the transmission of light.

The mirror device as described above can usually be produced by applyingthe production process of a semiconductor device. The production processmainly includes chemical vapor deposition (CVP), photolithography,etching, doping and chemical mechanical polishing (CMP).

In the meantime, attention should be paid to the facts that as theillumination light passes through the gap between the mirrors 302 andprojects onto the substrate 303 in the mirror device 200 shown in FIG.4, electrons flow is generated in a protective layer that is formed onthe substrate by using a semiconductor material.

When the electrons move to the semiconductor hinge 304 with a highresistance, changes occur to a charge volume that generates a coulombforce between the mirror 302 and address electrode.

Specifically, a protective layer formed with a multiple-layer structurehas a film thickness ranging between 1000- and 2000 angstroms, orbetween 4000- and 6000 angstroms. In this case, the light of theillumination light in the spectral range of blue to ultraviolet isabsorbed in the protective layer. Furthermore, the protective layer alsoabsorbs about 90% of the light with the wavelengths in the infraredregion. With The light absorbed in the protective film as describedabove, the problem is no longer limited to the concerns for the movementof electrons, further considerations must be taken into account aboutthe heat generated when the light projections are absorbed in theprotective layer. The heat propagated in the protective film coveringover the hinge of the mirror device may also adversely affect the mirroroperations due to the effects to the changes to the Coulomb force withthe heat propagation changing the operational characteristics of theelastic hinges.

The following lists the patent numbers related to the structures of theconventional mirror devices and the techniques for producing the mirrordevices. U.S. Pat. No. 7,183,618: This publication has disclosed a hingeformed in the opening part of a pedestal. U.S. Pat. No. 7,273,693: Thispublication has disclosed a mirror device comprising a mirror support.U.S. Pat. Nos. 5,673,139; 6,128,121; and 7,068,417. Each of thesepublications has disclosed a vertical hinge. U.S. Pat. No. 7,022,249:This publication has disclosed a method for forming the root of a hinge.U.S. Pat. No. 5,497,262: This publication has disclosed a horizontalhinge structure.

These patented and published disclosures related to the mirror deviceand hinge configurations and structures, however do not provide improvedmethods and device configurations to resolve the above discusseddifficulties and limitations.

SUMMARY OF THE INVENTION

In consideration of the technical difficulties and limitationsencountered by the conventional mirror devices as described above, anaspect of the present invention is to manufacture a mirror device withnew manufacturing processes with improved device configurations. Theimproved manufacturing processes and device configurations areimplemented for preventing the adverse effects attributable to theincident light projected to a protective layer on a substrate. Accordingto the present invention, a mirror device comprises: an electrodecovered with a protective film composed of a semiconductor disposed on asubstrate; a mirror disposed above the electrode; and an electricallyconductive hinge placed between the mirror and the electrode, wherein anopening part is formed in a part of the protective film, and the hingepenetrates the protective film in the opening part thereof.

Also according to the present invention, another embodiment of themirror device comprises: an electrode placed on a substrate; aprotective film formed on the electrode; a mirror placed above theelectrode; and a hinge composed of a semiconductor joined to theelectrode wherein the electrical resistance of the hinge is lower thanthat of the protective film.

Further according to the present invention, another embodiment of themirror device comprises: an electrode placed on a substrate; a pluralityof mirrors arranged in an array above the electrode; a protective filmformed on the substrate; and a hinge composed of a semiconductor isdisposed between the mirror and the electrode wherein the hinge isfurther composed of a material selected from a group of materialsconsisting of single crystal silicon (Si), poly-silicon and amorphoussilicon containing an additive of phosphorous, boron or arsenic, and atotal reflection area of the mirror occupies no less than 85% of an areaoccupied by the array.

Meanwhile, according to the present invention, another embodimentincludes a projection apparatus comprises: a mirror device as disclosedabove that further includes a light source for emitting an illuminationlight to the mirror and a projection optical system for projecting lightreflected by the mirror device manufactured and configured according toabove descriptions.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows a related art illustrating the basic system diagram of aprojection display using a micromirror device.

FIG. 1B shows a top view of mirrors a micromirror device used for animage display system.

FIG. 1C is a control circuit diagram for controlling and driving aconventional micromirror device used for an image display system.

FIG. 1D shows the scheme of Binary Pulse Width Modulation (Binary PWM)of a conventional digital micromirror to generate grayscales for imagedisplay.

FIG. 2 is a diagonal view of a mirror device arraying, in two-dimensionon a device substrate, mirror elements controlling the reflectiondirection of incident light by deflecting the mirror.

FIG. 3A is a cross-sectional diagram of a mirror element reflectingincident light to a projection optical system (i.e., an ON light state)by deflecting the mirror.

FIG. 3B is a cross-sectional diagram of a mirror element not reflectingthe incident light to the projection optical system (i.e., an OFF lightstate) by deflecting the mirror.

FIG. 4 is a cross-sectional diagram for illustrating the incident lightprojected into a mirror device.

FIG. 5A is a cross-sectional diagram for illustrating the processingsteps for producing a mirror device according to a preferred embodimentof the present invention (part 1).

FIG. 5B is a cross-sectional diagram for illustrating the processingsteps for producing a mirror device according to a preferred embodimentof the present invention (part 2).

FIG. 5C is a cross-sectional diagram for illustrating the processingsteps for producing a mirror device according to a preferred embodimentof the present invention (part 3).

FIG. 5D is a cross-sectional diagram for illustrating the processingsteps for producing a mirror device according to a preferred embodimentof the present invention (part 4).

FIG. 5E is a cross-sectional diagram for illustrating the processingsteps for producing a mirror device according to a preferred embodimentof the present invention (part 5).

FIG. 5F is a cross-sectional diagram for illustrating the processingsteps for producing a mirror device according to a preferred embodimentof the present invention (part 6).

FIG. 6A is a top view for showing a mirror element.

FIG. 6B is a side cross sectional view of a mirror element of FIG. 6A.

FIG. 7A is a cross-sectional view of a mirror element.

FIG. 7B is a top view diagram showing the surface of the semiconductorwafer substrate of a mirror element.

FIG. 7C is a top plain view for showing a modified exemplary embodimentby changing the surface electrode of FIG. 7B to a plurality of surfaceelectrodes.

FIG. 7D is a top view for showing a mirror element excluding a mirror.

FIG. 7E is a cross-sectional view for illustrating the ON state of amirror element.

FIG. 7F is a cross-sectional view for illustrating the OFF state of amirror element.

FIG. 8 is a functional block diagram for showing a single-plateprojection apparatus comprising one mirror device.

FIG. 9A is a front view diagram for showing a two-plate projectionapparatus comprising two mirror devices.

FIG. 9B is a rear view diagram for showing a two-plate projectionapparatus.

FIG. 9C is a side view diagram for showing a two-plate projectionapparatus.

FIG. 9D is a top view diagram for showing a two-plate projectionapparatus.

FIG. 10 is a functional block diagram for showing a three-plateprojection apparatus comprising three mirror devices.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A mirror device implemented in a projection apparatus according to apreferred embodiment of the present invention is described below byreferring to the accompanying drawings.

FIGS. 5A through 5F are cross-sectional diagrams for describing theprocessing steps for producing a mirror device according to a preferredembodiment of the present invention.

FIG. 5A shows the step 1 to form a wiring 502 of a drive circuit fordriving and controlling a mirror (which is described later) in asemiconductor wafer substrate (simply noted as “substrate” hereinafter)501. A cavity as an opening part (i.e., a cavity or concave part) 501 ais opened from a top surface of the substrate 501 and extends to theupper surface of the wiring 502 preferably composed of aluminum. A firstprotective layer, i.e., a protective film, 503 is deposited on the partsof the substrate 501 except for the opening part 501 a. The firstprotective layer 503 is deposited before the opening part 501 a of thesubstrate 501 is formed. An opening part 503 a on the same area size asthe to opening part 501 a is also formed as the side surface of thefirst protective layer 503. The first protective layer 503 is a layerfor preventing the wiring 502 from corroded with hydrogen fluoride (HF)when the hydrogen fluoride (HF) is applied to remove the sacrifice layeras described later.

Note that the substrate 501 shown in FIGS. 5A through 5F comprises aninsulation layer deposited on the upper part of a silicon substrate (notspecifically shown). The substrate 501 as an insulation layer and thefirst protective layer 503 each is preferred to have structurecomprising layers composed of amorphous silicon with a double-layerstructure consisting of an amorphous silicon and silicon carbide (SiC)or a double layer structure that includes silicon such as siliconcarbide (SiC) and silicon dioxide (SiO₂).

In step 2-1, an electrode 504 is formed over the first protective layer503 covering the surfaces of the opening parts 501 a and 503 a at thecenter and filling the cavity to contact the wire 502. In this electrodedeposition process, the electrode 504 is deposited to the opening parts501 a and 503 a, and filling the cavity as an opening part thus forminga top concave portion 504 a on the upper surface near at the center ofthe electrode 504. Note that the electrode 504 is formed as an electrodeto have a three-dimensional connection to a micro-electrical mechanicalsystem (MEMS) structure. As will be further described below, the presentembodiment is configured to fabricate an elastic hinge as constitutes aMEMS structure. Further, the electrode 504 is formed for connection toone end of the elastic hinge as a part of the side surface and bottomsurface of the elastic hinge fabricated as a MEMS structure.

In an exemplary embodiment, the electrode 504 is composed of an aluminummaterial containing silicon (Si). The electrode 504 can thereforeprevent an occurrence of migration between the electrode 504 and elastichinge because the electrode 504 functions as a support for firmlysupporting and stabilizing the elastic hinge as will be furtherdescribed in detail later.

In this exemplary embodiment, when aluminum is used to form theelectrode 504 on the insulation layer covered with the first protectivelayer both composed of amorphous silicon, the aluminum electrode 504 iscorroded when the aluminum electrode 504 contacts with these layers.Therefore, a preferred configuration is to form a silicon carbide (SiC)layer between the amorphous silicon layer and the aluminum electrode504. Alternatively, it is preferable to form the electrode 504 with amixture of aluminum with impurity such as silicon (Si). One or twobarrier layers composed of a material other than a silicon carbide (SiC)layer may also suppress a corrosion of the electrode 504.

In order to form a plurality of electrodes simultaneously in oneprocessing step, the height of the electrode 504 is made the same asthat of one or more electrodes placed under the end of a mirror (notshown in a drawing herein).

After the electrode 504 is deposited on the substrate 501 in step 2-1, atest of the drive circuit is carried out confirm the proper functioningof the drive circuit and/or the normal electrical connectivity of theelectrode 504.

Note that the electrode 504 is formed on the wiring 502 in step 2-1; itis also conceivable to form a Via (i.e., an intermediate layer or aconnection part) 505 between the wiring 502 and electrode 504 as shownin step 2-2. The Via 505 is preferably composed of an electricallyconductive material such as metallic material containing tungsten,cooper or aluminum and to have a horizontal cross-sectional area sizesmaller than that of the electrode 504.

A second protective layer 506 is formed in step 3. The second protectivelayer 506 is deposited on the upper part of the electrode 504 and firstprotective layer 503. The second protective layer 506 also forms aconcave part 506 a on top of the concave part 504 a of the electrode504. The thickness of the second protective layer 506 is preferably in arange between 500- to 3000 angstroms. When the protective film has athickness of 1000 angstroms or more, the protective layer absorbs thelight before the light reaches the substrate. The influence of aphotoelectric effect on the circuit formed in the substrate is reduced.Blue light is attenuated to about 5% at 500 angstroms, while green lightis attenuated to about 5% at 1000 angstroms. Red light is attenuated to10% or less at 2000 angstrom. Furthermore, a smaller the gap betweenmirrors reduces a projection of the illumination light to the substratethrough the gaps thus further reduces the photoelectric effect.Additionally, as the area size of the reflection surfaces is increased,the quantity of reflection light from the mirror is also increased andthe brightness of the projected images is further improved. Thereflection surface of mirrors is preferred to occupy 80% or more andpreferably up to 90% of the total areas of the regions occupied by themirror array of Moreover, the reflectance of a mirror is adverselyaffected when a mirror comprises a single aluminum layer having athickness about 300 Angstroms due to the fact that the illuminationlight transmits through the thin aluminum layer. The thickness of thealuminum layer is preferably 600 angstrom or even more. Furtherconsideration of the variations in the production processes and theflatness of the mirror, the thickness of aluminum is preferably 1500angstroms up to 3000 angstroms for a single reflective layer composed ofaluminum.

Specifically, the deposition of the second protective layer 506 isprocessed at 380- to 400° C. by applying silane and argon (SiH4+Ar) in aplasma-enhanced CVD (PECVD) process to form a layer covering over theamorphous silicon as a semiconductor material. Note that the chemicalvapor deposition is a method for depositing a film utilizing a chemicalcatalytic reaction by supplying a gaseous material in accordance withthe type of the sacrifice layer. The second protective layer 506 may beformed into a plurality of layers together with a protective layer thatmay include a material such as silicon carbide (SiC).

In step 4 shown in FIG. 5B, a first sacrifice layer 507 is formed. Thefirst sacrifice layer 507 is deposited at 400° C. by using silane,oxygen and argon (SiH4+O2+Ar) in a high-density plasma (HDP)-PECVDprocess and is formed as a layer of oxide. The height of the firstsacrifice layer 507 is determined based on a configuration that theupper part of an elastic hinge as described later will be deposited onthe first sacrifice layer 507.

In step 5, a first photoresist layer 508 is formed by applying a spincoating on the sacrifice layer 507. Then, an etching process is carriedout to open a hole through the first sacrifice layer 507, the secondprotective layer 506, and extends to the concave part 504 a of theelectrode 504. The hole is surrounded by sidewalls 506 a, 507 a and thesidewalls 504 a of the concaved top of the electrode 504.

In the etching process, the hole 507 a is formed in the first sacrificelayer 507 by applying an etchant gas of octafluorocyclobutane (C₄F₈) andcarbon monoxide (CO) to carry out a reactive ion etching (RIE).Furthermore, if the second protective layer 506 is formed as a silicon(Si) layer, the etching process is carried out with the gas of hydrogenbromide (HBr) and chlorine (Cl). With the second protective layer 506contains silicon carbide (SiC), an etching process is carried out byusing tetrafluoromethane, oxygen and argon (CF₄+O₂+Ar) to form the hole506 a by a RIE process in the second protective layer 506.

In step 6, a second sacrifice layer 509 is deposited into the holesurrounded by the sidewalls 506 a and 507 a of the second protectivelayer 506 and first sacrifice layer 507 and in the concave part 504 a ofthe electrode 504. The process proceeds by applying a chemicalmechanical polishing (CMP) process to remove the sacrifice layer 509from above the top surface surrounding the hole.

In step 7, a second photoresist layer 510 is formed to carry out anetching process to remove a portion of the second sacrifice layer 509.Another portion of the second sacrifice layer 509 covered under thephotoresist 510 is kept and shown as a column 509 a.

As will be further described below that an elastic hinge will beextended perpendicularly upward from the concave part 504 a of theelectrode 504 along the un-removed part 509 a, of the second sacrificelayer 509. Therefore, the height and size of the column 509 a aredetermined in accordance with the dimension, i.e., the height, of theelastic hinge.

In step 8 shown in FIG. 5C, a hinge layer 511 is deposited at 380- to400° C. by using SiH4+Ar by applying a PECVD deposition process. Indifferent exemplary embodiments, the thickness of the hinge layer 511 isbetween 100- and 1000 angstroms in consideration of a spring force fordeflecting a mirror and the electrical resistance of the hinge.Generally, the thickness of the hinge layer 511 is no more than 500angstroms and preferably between 150- and 500 angstroms.

Further, the horizontal part of the hinge layer 511, which is parallelto a mirror as will be described later provided to form a joinder part516 a thereon as shown in FIG. 5F below, is formed with a differentthickness than the perpendicular part of the hinge layer 511 Thehorizontal part of the hinge layer 511 formed on top of the uppersurface of the first sacrifice layer 507 has a thickness approximatelytwo to four times that of the part of the hinge layer formed bydeposition perpendicularly along the side walls of the second sacrificelayer 509 a. The upper part of the first sacrifice layer 507 ispreferably formed with a greater thickness because the hinge formed inthis section will have smaller elastic deformation. A greater thicknessin the upper part of the first sacrifice layer 507 will also provide abenefit that the formation of a joinder part 511 b can be moreconveniently carried out.

The deposition of the hinge layer 511 may be performed with any of thematerials such as single crystal silicon, poly-silicon and amorphoussilicon, which are doped with boron (B), arsenic (As) or phosphorous (P)as additive. Alternatively, the hinge layer 511 may be formed withmaterials having electrical conductivity by applying an in-situ dopingwith arsenic, phosphorous and the like, by applying an ion implant or bydiffusing a metallic silicide such as nickel silicide (NiSi) andtitanium silicide (TiSi). Further, the hinge layer 511 may be formed byaluminum containing silicon (Si). Moreover, the hinge layer 511 may beformed by using a material the same as that of the first protectivelayer 503.

Additionally, there may be alternative configurations by forming theelectrode 504 and hinge layer 511 by using the same material. Thethermal conductivity of the electrode 504 is made higher than that ofthe hinge layer 511 to dissipate heat effectively from the lower part ofan elastic hinge as will be described later. Furthermore, a layer madeof a different material than that of the materials of the electrode 504and hinge layer 511 is formed between the aforementioned two components.

In step 9, a third photoresist layer 512 is deposited on the hinge layer511. In step 10, a portion of the third photoresist layer 512, whichcovers the upper part of the concave part 504 a of the electrode 504 andthe upper part of the photoresist layer 512, is removed by applying anetching process to define the head position on the lower side of anelastic hinge as described later. The processes proceed by etching offthe exposed portion of the hinge layer 511 to form the elastic hinge.The etching process may use SF₄+O₂+Ar by applying an RIE and an isotopicetch process. Furthermore, in step 10, the etching process is controlledsuch that the width of the elastic hinge with the width indicated by thewidth indicated in the cross-section view, ranging between 0.5- and 1.5μm on the surface along the depth direction of the cross-sectionaldiagram shown in step 10.

In step 11, the third photoresist layer 512 is removed followed bydepositing a third sacrifice layer 513 and smoothing out the top surfaceby applying a CMP process. The third sacrifice layer 513 may be formedas a tetraethoxysilane (TEOS) layer or a layer composed of similarmaterials.

In step 12 shown in FIG. 5D, a fourth photoresist layer 514 is formed ontop of the third sacrifice layer 513 above the horizontal portion of theelastic hinge 511 a. The location of the fourth photoresist layer 514defines the head position on the upper side of the elastic hinge 511 a.As will be further described below, the third sacrifice layer 513 and aportion of the hinge layer 511 will be etched off later to complete theprocesses to form the elastic hinge 511 a.

The bottom surface of elastic hinge 511 a is connected to the bottomsurface of the concave part 504 of the electrode 504. The elastic hinge511 a further extends substantially perpendicularly from the substrate501 and connected to the side surface of the concave part 504 a.Therefore, the elastic hinge 511 a is connected to the electrode 504 inthree-dimension and fixed robustly onto the electrode 504.

Note that the elastic hinge 511 a is connected to the electrode 504disposed under the second protective layer 506. The elastic hinge 511 apenetrates the second protective layer 506 but have no contacttherewith. Further, the elastic hinge 511 a and second protective layer506 are placed so as to be not electrically conductive with each otherafter the completion of the subsequent processing steps. Note that aninsulation layer may be placed between the elastic hinge 511 a andsecond protective layer 506 to insulate these two components fromelectrically conductive with each other. When the second protectivelayer 506 is made of a high-resistance insulator, the elastic hinge 511a may be configured to contact the second protective layer 506.

In step 13, the fourth photoresist layer 514 is removed, and then afourth sacrifice layer 515 is deposited on the top surface. Note thatthe first through fourth sacrifice layers may be formed by using thesame material. Then, a CMP process is performed to polish the surface ofthe fourth sacrifice layer 515.

In step 14A-1, the elastic hinge 511 a supported on the substrate 501 isplaced near the center of a wafer, while in step 14A-2, the elastichinge 511 a is shown as disposed at the end of the substrate 501. Withthese two different configurations, depending on the CMP condition forthe respective wafers the amounts of polishing are different between thecenter and surrounding. In step 14A-1, the CMP process is performed topolish the fourth sacrifice layer 515 and remove the layers coveringover the upper surface of the elastic hinge 511 a. Therefore, a mirrorcan be deposited and formed on top of the elastic hinge 511 a. In step14A-2, however, the fourth sacrifice layer 515 at the end of thesubstrate 501 and the layer 513 covering the elastic hinge 311 a cannotbe completely removed. In that case, a mirror as will be described latercannot be formed directly on top of the elastic hinge 511 a.

Accordingly, a part of the fourth sacrifice layer 515 covering the uppersurface of the elastic hinge 511 a is removed by applying an etchingprocess. Then a semiconductor material 516 possessing electricconductivity is deposited by applying a CVD process that is same as step14B-1 shown in FIG. 5E to deposit the semiconductor material 516 byusing a single crystal silicon (Si) or poly-silicon followed by dopingthe semiconductor material with boron (B), arsenic (As) or phosphorous(P). Alternately, the semiconductor material 516 may compose of a samematerial as that used for the elastic hinge 511 a.

Then, the semiconductor material 516 is removed by applying an etchingprocess. One or at least two joinder parts such as a convex part, aconductive part and a conductive layer 516 a are formed on the topsurface after the fourth sacrifice layer 515 is removed (as shown instep 14B-2). Then, a CMP process is performed to further process bypolishing the upper surfaces of the third and fourth sacrifice layers513 and 515 and the upper surface of the joinder part 516 a. The joinderpart 516 a is polished to have a predetermined height (e.g., 0.1 μm) inaccordance with the flatness of the third and fourth sacrifice layers513 and 515.

Further, the joinder part 516 a is formed to be smaller than a mirror518. This configuration and the processing steps provide uniform sizeand dimension of the hinges and joinder parts fabricated in each regionof a wafer or in each wafer and a uniform height of the mirror surface518 is achieved. Furthermore, as a different production method for ajoinder part 516 b, a joinder part 511 b can be formed by depositing afifth photoresist layer 517 on a part of the upper surface of theelastic hinge 511 a and then applying etching process as shown in step14C-2, starting from the state shown in step 14C-1.

In step 15 shown in FIG. 5F, following the steps 14B-1 and 14B-2 afterforming the joinder part 516 a, an aluminum surface formed as areflective mirror 518 is sputtered onto the top surface of the layer 511a. The mirror 518 may be configured approximately with a square shape ora parallelogram shape in an orthogonal view. Note that the sputtering ofthe mirror 518 onto a top surface provided with the joinder part 516 aprojected upward from the sacrifice layers 513 and 515 makes it possibleto join the joinder part 516 a with mirror 518 in the inside surface ofthe mirror 518.

Then, in step 16-1 with a joinder part 516 a, and in step 16-2 withdirect mirror surface on top of the hinge 511 a, an etch process withhydrogen fluoride (HF) gas and alcohol is applied to remove the firstthrough fourth sacrifice layers 507, 509 a, 513 and 515.

If the first through fourth sacrifice layers 507, 509 a, 513 and 515 areformed by the TEOS, the first through the fourth sacrifice layers areremoved with an HF gas and alcohol. The remaining foreign material andsacrifice layers can be completely removed by appropriately adjustingthe densities of the hydrogen fluoride and alcohol and the processingtime. Consequently, the problem of stiction due to the mirror 518contacts with and attached to the second protective layer 506 on theelectrode 504 can be prevented. Note that the first through fourthsacrifice layers 507; 509 a, 513 and 515 may be removed after thesubstrate 501 is diced and separated from a large piece of wafer intoindividual devices. In such sequence of processes, after the wafer isfirst laminated with a protective layer (not specifically shown),composed of SiO2 or similar laminating material on the entire uppersurface of the mirror 518 to protect the mirror surface is performedbefore the dicing process.

The elastic hinge 511 a and mirror 518 are formed on the substrate 501and electrically conductive to a drive circuit (not shown) and theelectrode 504. The drive circuit transmits control signals to theelectrode to control and deflect the mirror 518.

Furthermore, a light shield layer as an antireflective layer forsuppressing the reflection light from the surface of the protectivelayer 506 may be coated on the surface of the protective layer 506. Theantireflective light shield layer may be a coated layer, which does notinfluence the resistance value of the elastic hinge 511 a.

Meanwhile, there is an anti-stiction countermeasure process forpreventing a moving part (mainly a mirror) from sticking to the stopperpart of an electrode to prevent an operation failure. The anti-stictionmember may be provided by laminating a monolayer ofperfluorooctyltrichlorosilane (CF₃(CF₂)₅(CH₂)₂SiCl₃; PFOTS),perfluorooctyldimethylchlorosilane (CF₃(CF₂)₅(CH₂)₂Si(CH₃)₂Cl; PFODCS),or perfluorodecyldimethylchlorosilane (CF₃(CF₂)₇(CH₂)₂Si(CH₃)₂Cl;PFDDCS) on the protective layer 506 and mirror 518. When such amonolayer is further deposited on the surface of the protective layer506, it is preferable to use a high resistance material similar to thatof the protective layer 506 to minimize any impacts on the resistancevalue of the elastic hinge 511 a.

In practice, there is the process for dividing a mirror device intomirror devices of a size to be used by carrying out a dicing processfollowed by the process for packaging the individually divided mirrordevices. A description of them is not provided herein.

In a prefer embodiment, the mirror device has elastic hinges 511 a thathave a height of 2 μm or less and preferably have a height rangingbetween 0.3 to 1.2 μm. Furthermore, the mirror 518 is formedsubstantially to have a square shape with one side of the square havinga length 10 μm or less.

Furthermore, the elastic hinge is connected onto an electrode at alocation that is in the vicinity of the rear surface of a mirror so thatthe illumination light projecting onto the elastic hinge is minimized.

FIG. 6A is a top view hand FIG. 6B is a side cross sectional view of amirror element 600.

The elastic hinge 611 of the mirror element 600 is fabricated byprocessing steps according substantially to the processing stepsdescribed above has an intermediate part 611 m extending in the verticaldirection (i.e., approximately perpendicular to a substrate 601).Further, the upper part 611 u of the elastic hinge 611 is a flat partextending horizontally by bending from the intermediate part 611 m. Thebottom part 611 b of the elastic hinge 611 is a flat part extendinghorizontally and bending from the intermediate part 611 m in a directionopposite to the upper part 611 u.

A mirror 618 is attached to the upper part 611 u of the elastic hinge611 through a joinder part 616. The elastic hinge 611 is formed at thecenter of the mirror 618 with the joinder part 616 disposed on top ofthe upper flat part 611 u at an off-center position offset from thecenter of the mirror 618 in the deflection direction thereof. Note thatthe joinder part 616 may alternatively be placed at a off-centerposition with an offset distance along a direction opposite from thedeflection direction of the mirror 618.

Further, the bottom part 611 b of the elastic hinge 611 is attached tothe bottom surface of the concave part 604 a of an electrode 604. Abottom portion of the intermediate part 611 m is attached to the sidesurface of the concave part 604 a.

In FIG. 6A, the joinder part 616 has a rectangular shape and arranged inan orientation that all sides of the rectangular cross section of thejoinder part 616 along a horizontal direction having an inclined anglerelative to the deflection direction of the mirror 618. Specifically,each side of the joinder part 616 is arranged with an orientation thathas an inclined angle of 45 degrees relative to the deflection directionof the mirror 618. In the case when the attachment of the joinder part616 causes any defection on the reflection surface of the mirror 618,abnormal diffraction light and/scatter light may be projected from themirror 618. Even in such case, the abnormal diffraction and/orscattering light would not project along a direction orthogonal to thedeflection direction of the mirror thus miniinze the influence of theabnormal diffraction and/or scattering light since amount of theseabnormal diffraction and/or scattering lights projected along an ONlight direction is minimized with such joinder part orientation.Further, it is desirable to minimize occurrence defections on the topsurface of the mirror by limiting the height of the joinder part 616 tobe less than 0.1 μm and preferably no more than 0.05 μm. Furthermore,the horizontal cross section of the joinder part 616 may have a shape ofa circle or oval and the joinder part 616 has no straight side-surface.

There are additional considerations in manufacturing the mirror element600 when fabricating the elastic hinge 611 due to the fact that there isa significant change in the elastic strength with a variation in thethickness or fluctuation of the height of the elastic hinge 611.Furthermore, due to a residual stress resulting from some of theprocessing steps, the elastic hinge 611 may sometimes be deformed afterthe sacrifice layer in the surrounding of the elastic hinge 611 isremoved.

Therefore, the fabrication processes of the elastic hinge must be ableto satisfy the condition that the width W of an elastic hinge as thatdefined by the length in the depth direction of the cross-sectiondiagram shown in FIG. 6B) must be greater than the height L of theelastic hinge, i.e., W>L. Especially, it is desirable to place theelastic hinge 611 substantially along a vertical direction between thecenter electrode 604 and mirror 611 and has a configuration to satisfythe relationship that: The width W of the elastic hinge 611≧the height Lof the elastic hinge>the thicknesses HP, HU and HL of the elastic hinge.The inventor of the present invention have carried out some of the abovemanufacturing processes and confirm that the mirror 618 formed on theelastic hinge 611 tends to incline instead of maintaining at ahorizontal position when The width W of an elastic hinge is not greaterthan the height L of the elastic hinge. For example, the mirror 618tends to incline instead of maintaining at a horizontal position whenthe elastic hinge is formed with a height of 1 μm and a width W of theelastic hinge as 0.8 μm.

In contrast, when an elastic hinge is fabricated to satisfy thecondition that The width W of an elastic hinge is greater than theheight L of the elastic hinge, e.g., The height L of an elastic hinge611 is 1 μm and the width W of the elastic hinge 611 is 1.2 μm, then themirror 618 is confirmed to maintain at a horizontal position.

In the case of forming a plurality of elastic hinges 611 to support onemirror 618, the plurality of hinges retain the mirror 618 and thereforethe width W of each elastic hinge can be reduced. If the thickness of anelastic hinge is small, however, it is desirable to satisfy thecondition of:

The width W of an elastic hinge>the height L of the elastic hinge

Further, a joinder layer may be deposited on the bottom surface of themirror 618. By forming the joinder layer with a small area, thedeformation and/or warping of the mirror 618 caused by the difference inthe linear expansion coefficient between the mirror 618 and joinderlayer may be prevented.

The intermediate part 611 m of the elastic hinge 611 is tapered off fromthe upper part 611 u toward the bottom part 611 b, with the thicknessgradually decreasing toward the bottom part 611 b, i.e., the thicknessesHU>HL. Note that the thickness HP of the upper part 611 u is the same asthat of the uppermost part of the intermediate part 611 m, while thethickness of the bottom part 611 b is about the same as that of themiddle part of the intermediate part 611 m. Further, the elastic hinge611 is preferred to satisfy the relationship of the area size of ahorizontal cross-section of the upper part 611 u>the area size of ahorizontal cross-section of the bottom part 611 b.

The elastic hinge 611 manufactured with convenient processing steps asdescribed above has a very high endurance as an elastic body. It isconfirmed that the elastic hinge is able to sustain normal operationafter several trillions of deflections.

Meanwhile, the height of the electrode 604 extended from the substrate601 is approximately the same as the height of the elastic hinge 611supported on and extended from the concave part 604 a of the electrode604. Alternatively, the elastic hinge extended from the concave part 604a may be formed with a height smaller than the height of the electrode604 to prevent a potential problem that the mirror 618 is formed with anincline angle relative to the substrate 601 in the process of removing aplurality of sacrifice layers. Further, by forming the elastic hingewith smaller height thus reducing the distance between the mirror 618and electrode 604 further improve the manufacturing process to moreconveniently make the mirrors 618 with a uniform height.

Furthermore, a configuration of making the height of the elastic hinge611 no more than the distance between the concave part 604 a andsubstrate 618 further reduces the likelihood that the mirror 618 isformed with an incline angle relative to the substrate 601.

FIG. 6B shows a second protective layer 606 is deposited on top of thefirst protective layer 603. The first protective layer 603 is formed asa silicon carbide (SiC) layer, while the second protective layer 606 isformed as an amorphous silicon layer. The elastic hinge 611 is alsoformed with an amorphous silicon material and doped with boron (B),phosphorous (P) or arsenic (As). Because of this, when a voltage isapplied to the electrode, the voltage is applied to the mirror 618through the elastic hinge 611. Alternatively, the mirror 618 can beconnected to the ground (GND) by way of the elastic hinge 611. In thiscase, the elastic hinge 611 is preferred have a resistance of 1 GΩ orless, and for some applications, the resistance is further preferably100 MΩ or less. The elastic hinge 611 has a high resistance of at least1 TΩ if the elastic hinge is formed with amorphous silicon and theresistance of the amorphous silicon can be 1000 times higher if theamorphous silicon containing a very small amount of impurity. Whenelastic hinge 611 has a high resistance, the response characteristicsare adversely affected during a mirror deflection operation due to thefact that the electrons would not flow through the elastic hinge 611smoothly. It is therefore necessary to increase the voltage applied tothe address electrode for driving the mirror 618. For this reason, whenthe mirror is controlled to turn On/Off at a high-speed, such as 300nsec or less, or 100 nsec or less, or even 20 nsec or less, theresistance of the elastic hinge is preferred to be at least 1 GΩ orless, or further preferably 500 MΩ or less. Under the circumstances thatthe mirror is required to operate in a higher speed, the elastic hingeis preferred to have a resistance that is further reduced to ranges suchas 200 MΩ or less, 100 MΩ or less, or even 50 MΩ or less.

In alternate embodiments, the second protective layer 606 is not formedas a layer with a doping and therefore remains to be a layer of highresistance. Specifically, the second protective layer 606 has a higherresistance than the elastic hinge 611. Furthermore, the gap between themirrors 618 of the mirror device is preferably between 0.15- to 0.55 μmand the elastic hinges 611 is preferably formed with a height that is 2μm or less, or further preferably between 0.3- and 1.2 μm supported onand extended from the electrodes of approximately the same heights. Inan exemplary embodiment, the mirror 618 of each mirror element is formedas an approximate square shape with each side having a length rangingbetween 8- to 10 μm. With such a mirror configuration, the elastic hinge611 is hidden in the rear surface of the mirror 618 thus preventing theillumination light to project directly onto the elastic hinge 611. Evenin the case that the elastic hinge 611 is formed by using asemiconductor material and having a relatively high resistance, theadverse effects such as the movement of photoelectrons in the elastichinge 611 produced by illumination light projected onto the elastichinge 611 can be reduced.

FIGS. 7A through 7F are diagrams for describing a mirror element 700.Similar to the mirror element 600 shown in FIGS. 6A and 6B, FIG. 7Ashows a mirror element 700 manufactured by the processing stepsdescribed above. The substrate 701 supports the mirror element 700 thatincludes the wirings 702 a, 702 b and 702 c of a drive circuit fordriving and controlling a mirror 718; first set of via connectors 705 a,705 b, 705 c, 705 d and 705 e, which are connected to the wirings 702 a,702 b and 702 c; and a first insulation layer 719. Note that in apreferred embodiment, the drive circuit includes a dynamic random accessmemory (DRAM). As shown on the left side of FIG. 7A, The wiring 702 afurther includes two of the first set of via connectors 705 c and 705 e,both penetrate through the first insulation layer 719. The wiring 702 bon the right side of FIG. 7A also includes two of the first set of viaconnectors 705 b and 705 d, both penetrate through the first insulationlayer 719. Meanwhile, the wiring 702 c at the center includes one of thefirst set of via connectors 705 a.

As described above, five of the first set of via connectors penetratesthrough the first insulation layer 719. Note that the number of firstset of via connectors may be different between the left and rightwirings. Further, the number of first set of via connectors may be more,or less, than the five via connectors as shown. Then, second set of viaconnectors 720 a, 720 b and 720 c or surface electrodes 721 a and 721 bare formed on top of the first set of via connectors 705 a, 705 b, 705c, 705 d and 705 e. Specifically, the second Vias 720 a, 720 b and 720 care respectively formed on top of the first set of via connectors 705 aformed on the wiring 702 s at the center, the first via connectors 705 band 705 c on one side of two first set of via connectors formed on thewirings 702 b and 702 a on the left and right sides. Meanwhile, surfaceelectrodes 721 a and 721 b are respectively formed on top of theremaining first set of via connectors 705 d and 705 e not supporting anyof the second set of via connectors 720 a, 720 b and 720 c thereon. Thesemiconductor wafer substrate 701 is preferably a silicon substratesupporting an insulation layer 719 thereon. A First protective layer 703is deposited on top of the first insulation layer 719 and a secondprotective layer 706 is formed on the first protective layer 703. Thewirings 702 a, 702 b and 702 c of the drive circuit are preferablyformed by using the aluminum wirings. The first set of via connectors705 a, 705 b, 705 c, 705 d and 705 e and the second set of viaconnectors 720 a, 720 b and 720 c are preferably formed by using amaterial including tungsten and cupper.

The surface electrodes 721 a and 721 b may be formed with the samematerial or a similar material such as a tungsten with the materialsused in forming the first set of via connectors 705 a, 705 b, 705 c, 705d and 705 e and the second set of via connectors 720 a, 720 b and 720 c.Alternate materials with a high electrical conductivity such as analuminum material may also be used. Depending on specific deviceconfigurations, the surface electrodes 721 a and 721 b may have flexiblesizes and shapes that can be discretionarily determined. In addition tothe configuration shown in FIG. 7A where the surface electrodes 721 aand 721 b are formed respectively on top of the first set of viaconnectors 705 d and 705 e these electrodes may also be formed directlyon the wirings 702 a and 703 b, respectively.

The first insulation layer 719, the first and second protective layers703 and 706 may be preferably formed as layers composed of siliconcompounds such as silicon carbide (SiC), amorphous silicon and silicondioxide (SiO2).

By forming the surface electrodes 721 a and 721 b as aluminumelectrodes, a direct contact between the amorphous silicon and thealuminum electrodes must be prevented due to the concern of aluminumcorrosion of the surface electrodes 721 a and 721 b. Therefore, asilicon carbide (SiC) layer disposed between the amorphous silicon andthe aluminum surface electrodes 721 a and 721 b is probably necessary.Alternate embodiments may be configured by forming the electrodes byusing materials with mixing impurity such as silicon (Si) with aluminum,or by forming of a barrier layer made of tantalum (Ta) or titanium (Ti)on the top or bottom of the electrode. This barrier layer may also beformed to comprise two or more layers.

Special consideration should also be taken into account that a stictiongenerated by the contact between the mirror 718 and electrodes 722 a or722 b on the left or right side should be prevented. This is achieved byproviding a stopper on the substrate 701 so that the mirror 718 isstopped before contacting with either electrodes 722 a or 722 b on theleft and right sides. The electrodes 704, 722 a and 722 b are preferablyformed with a high electrically conductive material such as aluminum andelectrically connected to the second set of via connectors 720 a, 720 band 720 c, respectively.

The center electrode, i.e., the hinge electrode, 704 is the electrodeplaced for an elastic hinge and is configured to have the same height asthe left and right electrodes 722 a and 722 b. These three electrodes704, 722 a and 722 b have the same height can therefore be manufacturedsimultaneously by applying the same fabrication processes. A process toadjust the height of the center electrode 704 during the productionprocesses further enhance the process of determining the location of thecenter part for placing the elastic hinge 711 as will be furtherdescribed below

The elastic hinge 711 is formed with amorphous silicon in an exemplaryembodiment. The thickness (i.e., the left to right direction of FIG. 9A)of the elastic hinge 711 is preferably in a range between about 150- and400 angstroms.

In alternate embodiments, a plurality of elastic hinges may be formed tosupport and deflect one mirror 718 and the hinges may have a smallerwidth. For example, two elastic hinges each having a smaller width thana single elastic hinge for supporting and deflecting a mirror 718 may beinstalled on both ends of the mirror.

Furthermore, if the elastic hinge 711 is formed with a silicon (Si)material it is preferable to form the elastic hinge 711 as anelectrically conductive hinge by applying an In-Situ doping with boron(B), arsenic (As), or phosphorous (P), by using an ion implantedmaterial, or by diffusing a metallic silicide such as nickel silicide(NiSi) and titanium silicide (TiSi). When the elastic hinge 711 isformed with silicon (Si) as a group IV element among semiconductormaterials, an additive to the hinge may be appropriately selected fromamong the materials belonging to the III group or V group.

Furthermore, the mirror element 700 further includes a second insulationlayer as a protective film 723 is deposited on the surface of thestructure part of the substrate 701 and the second insulation layer 723and the center electrode 704 are connected to GND. The second insulationlayer 723 is preferably formed as a layer containing silicon (Si) suchas silicon carbide (SiC) and amorphous silicon. This layer is formed forpreventing corrosion caused by hydrogen fluoride (HF) coming intocontact with the electrodes 704, 722 a and 722 b and surface electrodes721 a and 721 b when these electrodes are formed as aluminum electrodes.

Furthermore, a joinder layer is formed on the top surface of the elastichinge 711. The joinder layer may be formed by using the same material asthe elastic hinge by configuring the joinder layer to have the same areasize and form as the mirror 718. In order to prevent the mirror 718 fromdeforming and/or warping due to the difference in linear expansioncoefficient between the mirror 718 and joinder layer, it is preferableto form the joinder layer with a smallest possible area size.

Further, a joinder to function as a mirror connection part 716 isdeposited on the joinder layer of the elastic hinge 711 for enhancing anelectric conduction between the elastic hinge 711 and mirror 718 andflexibly adjusting the layer thickness for eliminating a variation inthe height among the individual mirror elements.

In an exemplary embodiment, the joinder layer 716 is preferably formedwith a single crystal silicon (Si), amorphous silicon or poly-silicon.The joinder layer 716 is then applied with an In-Situ doping with boron,arsenic or phosphorous, or ion-implanted; or an annealed semiconductormaterial. Alternatively, the joinder layer 716 may be further processedby diffusing a metallic silicide such as nickel silicide (NiSi) andtitanium silicide (TiSi) to increase the electrical conductivity. Withthe joinder layer 716 formed with a group IV semiconductor materialcontaining silicon (Si), an additive into the joinder layer may beappropriately selected from the materials in group III or group V. Theresistance of the joinder layer 716 is approximately the same as that ofthe elastic hinge 711 or mirror 718, and is lower than the resistance ofthe first and second protective layers 703 and 706.

With the mirror 718 formed with aluminum and the elastic hinge 711formed with a silicon material, a barrier layer (not specifically shown)may be deposited on the top and bottom surfaces of the joinder layer 716to prevent the mirror 718 to contact the elastic hinge 711 and thebarrier layer may be also be formed with two or more layers. Then, amirror 718 is formed on top of the joinder layer 716 of the elastichinge 711 to complete the processes for fabricating the mirror element700.

The mirror 718 is preferably formed as a member that has a highreflectance of light such as an aluminum surface. The mirror surface mayalso be formed by using an aluminum alloy containing titanium (Ti)and/or silicon (Si). Meanwhile, the top surface of the mirror 718 may beprovided with an aluminum oxide layer.

In an exemplary embodiment, the mirror 718 is preferably formed with asquare or a diamond shape, with each side having a length in a rangeabout 4 to 11 μm. The gap between individual mirrors 718 is preferablyabout 0.15- to 0.55 μm. In a preferred design, the opening ratio of anindividual mirror element, i.e., the ratio of the area size occupied bythe mirror 718 to function as the reflection area to the area thatincludes the mirror 718 arranged in an array and the gap between mirrors718, is no less than 85%, or further preferably, no less than 90%. Withsuch configuration, even in the case that the elastic hinge 711 isformed with a semiconductor material and having a relatively highresistance value, the adverse effects caused by the movement ofphotoelectrons generated in the elastic hinge 711 when irradiated by theillumination light can be reduced. In a preferred embodiment, theconfiguration is to provide the reflection areas occupy about 85% of theareas of the total areas of the mirrors 718 even when a torsion hinge isused.

FIG. 7B is a top view to show the surface of the substrate 701supporting the mirror 718 shown by the dotted lines and controlled bythe left and right electrodes 722 a and 722 b and the center electrode704. Meanwhile, the deflection axis 718 a of mirror 718 is indicated bya single-dot chain line.

As shown in FIG. 7B, the surface electrodes 721 a and 721 b have arectangle shape and are placed in opposite corners of the mirror 718.Further, the surface electrodes 721 a and 721 b are symmetrically placedon opposite sides of the center of the mirror 718. Note that the surfaceelectrode 721 may be provided by arraying a plurality of miniatureelectrodes as indicated by the component signs 721 c and 721 d shown inFIG. 7C. The individual miniature electrodes are respectively connectedto Vias 705 to maintain at a same potential. The individual miniatureelectrodes can be formed by a single production process as that forforming a via connector between the metallic layers in the semiconductorproduction process that can be conveniently carried out as standardprocessing steps.

The electrodes 722 a and 722 b formed on the left and right sides of theelastic hinge 711 are placed at the areas not occupied by the surfaceelectrodes 721 a and 721 b and hinge electrode 704 under the mirror 718.Alternatively, the electrodes 722 a and 722 b may also be formed tooverlap the entirety, or a part, of the surface electrodes 721 d and 721e as shown in FIG. 7C. By simultaneously applying a same voltage to thesurface electrodes 721 and electrodes 722, the surface electrodes 721and electrodes 722 may be electrically conductive to each other. Incontrast, when the voltages applied to the surface electrodes 721 andelectrodes 722 are in different timings or with different voltages, thenelectrically separated and different drive circuits are connected to therespective electrodes 721 and electrodes 722. The electrodes 722 a and722 b are also symmetrically formed relative to the center of the mirror718 just like the surface electrodes 721 a and 721 b.

FIG. 7D is a top view of the mirror element 700 excluding the mirror 718with the mirror 718 is represented by an enclosure box shown in dottedlines.

As shown in FIGS. 7A and 7D, the electrodes 722 a and 722 b are formedto extend from the substrate 701. Then, the electrodes 722 a and 722 bare formed to allow the mirror 718 to have contact with the electrodes722 a and 722 b, respectively. The electrodes 722 a and 722 b define themaximum deflection angles of the mirror 718.

In a preferred embodiment, the electrodes 722 a and 722 b are formed todefine the deflection angle of the mirror 718 between 12- and 14degrees. Such a deflection angle of the mirror 718 is preferablydesigned in compliance with the designs of the light source and opticalsystem of a projection apparatus. A preferable design also includes theheight of the elastic hinge 711 of each mirror element 700 less than orequal to 2 μm and the mirror 718 of each mirror element 700 to have asquare shape with the length of each side less than or substantiallyequal to 10 μm.

FIG. 7E shows the mirror 718 of the mirror element 700 is controlled tooperate in an ON state when the mirror 718 reflects the incident lightemitted from a light source along an ON light direction when the mirror718 deflects to the right side. In contrast, FIG. 7E shows the mirror718 of the mirror element 700 is controlled to operate in an OFF statewhen the mirror 718 reflects the incident light emitted from a lightsource along an OFF light direction when the mirror 718 deflects to theleft side.

When no voltage is applied to surface electrodes 721 a and 721 b on theleft and right sides of the mirror element 700 and electrodes 722 a and722 b, the elastic hinge 711 is not deformed, and the mirror 718 is keptat a horizontal direction. As a voltage is applied to the electrode 722b and surface electrode 721 a, both on the right side, a coulomb forceis generate and the Coulomb force can be represented as (the uppersurface area of an electrode)×(the applied voltage to an electrode)/(thesecond power of the distance between the electrode and mirror)

The Coulomb force is generated between the mirror 718 and the electrode722 b on the right side and the surface electrode 721 a on the rightside. The mirror 718 is drawn by the total Coulomb forces between themirror 718 and electrode 722 b and deflected to the right. The distancebetween the mirror 718 and the right-side surface electrode 721 a islarger than the distance between the mirror 718 and the right-sideelectrode 722 b. Also the surface area of the surface electrode 722 b islarger than the right-side electrode 721 a. Therefore, the Coulomb forcegenerated between the mirror 718 and the right-side surface electrode722 b is greater than that generated between the mirror 718 and theright-side electrode 721 a.

Further, when the mirror 718 is deflected to approach the right-sidesurface electrode 721 a, the reaction force is now strong due to therestoring force of the elastic hinge 711 as a result of the mirror 718is deflected to a maximum angle between 12- to 14 degrees. Theright-side surface electrode 721 a placed on the surface of thesubstrate, however, is drawing the mirror 718 with a smaller coulombforce governing by a lever principle, i.e., the principle of moments ofa rigid body. The Coulomb force draws the right end part with a longdistance from the elastic hinge 711 of the mirror 718. As a result, byapplying a low voltage to the right-side surface electrode 721 a canmaintain the deflection state of the mirror 718.

When the mirror 718 is deflected to the right side as described above,the reverse-side (i.e., the left side) surface electrode 721 a and theleft-side electrode 722 a are maintained at a ground potential. In adeformed condition, the bottom part of the elastic hinge 711 on the sidenear the electrode 704 has the largest elastic stress.

FIG. 7F shows the mirror 718 deflected to the left side as the mirrorelement 700 is controlled to operate in an OFF light state. A voltage isapplied to the electrode 722 a and surface electrode 721 b on the leftside that is opposite to the electrodes for operating the mirror in anON state.

In different embodiments, the voltages applies to the electrodes may beflexibly changed for different shapes and size of the mirror 718 andelastic hinge 711, or for different deflection force and control of theelastic hinge 711, or for different deflection control due to changesmade to the mirror 718 or changes made to the configurations between theleft and right sides of the mirror element 700. Different voltages maybe applied by changing the area size, height and/or placement (i.e., thelayout) of the respective surface electrodes 721 a and 721 b orrespective electrodes, 722 a, 722 b and 704 between the right and leftsides of the mirror element 700, in order to control the deflection ofthe mirror 718. Moreover, multi-step voltages may be applied to therespective surface electrodes 721 a and 721 b and respective electrodes722 a and 722 b on the right and left sides of the mirror element 700 toperform a control.

Furthermore, the circuits and voltages for driving the surfaceelectrodes or electrodes for either one of the right-side surfaceelectrode 721 a and electrode 722 b and the left-side surface electrode721 b and electrode 722 a of the mirror element 700 may be flexiblychanged depending on specific device requirements for different imagedisplay systems.

Furthermore, at least one or both of the right side and left-sidesurface electrodes 721 a and 721 b respectively of the mirror element700 may be protruded from the top surface of the substrate.

Note that the characteristic parts of the mirror element of the mirrordevice produced by the production method described by referring to FIGS.5A through 5F, the mirror element 600 shown in FIGS. 6A and 6B, and themirror element 700 shown in FIGS. 7A through 7F may be flexibly combinedand applied to manufacture different types of mirror elements fordifferent types of image display systems as will be further describedbelow.

<Single-Plate Projection Apparatus>

The following is a description of an example of the single-plateprojection apparatus comprising one mirror device as an exemplaryembodiment in the present embodiment. FIG. 8 is a functional blockdiagram of a single-plate projection apparatus implemented with a mirrordevice as described above in the present invention. The projectionapparatus includes a light source 801 emits the light for projecting animage. The projection apparatus further includes a processor 810 thatincludes a light control unit 802 to control the light source 801. Thelight source 801 may be an arc lamp light source, a laser light sourceor a light emitting diode (LED). The light source 801 may also beimplemented with a plurality of sub-light sources. The number, andperiod of time, of sub-light sources to for projecting lights arecontrolled by the light source control unit 802 to adjust the lightintensity.

Also, the light source control unit 802 controls each the sub-lightsources according to the locations of the sub-light sources for emittinga light with a predefined light intensity distribution.

The light source 801 may also be implemented with a plurality of laserlight sources with different wavelengths. The light source control unit802 may flexibly control each of the individual laser light sources toselect a color of the incident light thus eliminating the requirement ofa color light wheel 806 described below. The light source may beimplemented with a laser light with a pulse emission of light or a lightemitting diode (LED) light source.

By using a near-parallel flux of light with a small light dispersionangle, such as a laser light source, based on the operational principlesof the etendue, the numerical aperture NA of an illumination light fluxof the flux reflecting on the mirror device 814 can be reduced. Thisconfiguration has the advantage that an interference of the illuminationlight flux prior to projecting to the mirror device with the reflectedlights projected from the mirror device is minimized. An image displaysystem can be provided with reduced size by configuring the opticalpaths of these fluxes closer to each other. The quality of the image canalso be improved by projecting the image light using a more compactsystem with a mirror device having a smaller deflection angle. The imagedisplay system further includes first condenser lens 803 converges thelight from the light source 801, a rod integrator 804 uniforms anintensity of light; and a second condenser lens 805 converges the lightemitted from the rod integrator 804. The image display system furtherincludes a color wheel 806 that includes a filter member implementedwith a plurality of filters. Each of the individual filters extracts aspecific wavelength. As an example, the filter member includes threefilters, i.e., a filter for extracting the light of the wavelength ofred, that for extracting the light of the wavelength of green and thatfor extracting the light of the wavelength of blue. Further, each filterof a light-passing path is controlled by a color wheel drive unit 807 toflexibly change colors of each light-passing path by rotating or slidingthe filter member. The filter may also have a specific polarizationproperty. The motor control unit 808 of a processor 810 controls thecolor wheel drive unit 807. The rotation or slide speed of the filter iscontrolled by the color wheel drive unit 807.

A total internal reflection (TIR) prism 809 includes an air gap betweentwo triangle prisms, i.e., a first prism 811 and a second prism 812.Further, the first prism 811 carries out a function to totally reflectthe incident light. As an example, the first prism 811 totally reflectsthe incident light to the light path entering the mirror device. Thetotally reflected light is modulated by the mirror device and reflectedtoward the second prism 812. The second prism 812 transmits thereflection light incident thereto at a angle that is smaller or equal toa critical angle or smaller and then modulated by the mirror device 814housed in the package 813 and controlled by a spatial light modulatorcontrol unit of the processor 810.

A projection lens 816 serves a function of enlarging the light reflectedand modulated by the mirror device 814 to project the light onto ascreen 817. The processor 810 includes a light source control unit 802,a motor control unit 808 and an SLM control unit 815. The processor 810carries out the function of synchronously controlling, coordinating,integrating, and processing the signals received from and transmittingto each of the aforementioned control units Furthermore, the processor810 is connected to an image signal input unit 818 to receive andprocesses image signal data input from the input unit 818. The processor810 is further connected to the frame memory 819 and is capable ofsending the processed image signal data.

The image signal input unit 818 inputs the incoming image signal data tothe processor 810. Furthermore, the frame memory 819 receives and storesthe image signal data of a single screen processed by the processor 810.The following descriptions explain the principle of projecting a colorimage at the single-plate projection apparatus 800 shown in FIG. 8. Inthe single-plate projection apparatus 800, the light output from thelight source 801 enters into a filter of the color wheel 806 through thefirst condenser lens 803, rod integrator 804 and second condenser lens805.

The filter of the color wheel 806 extracts light of a specificwavelength enters into the first prism 811 of the total internalreflection (TIR) prism 809.

Furthermore, the light reflected by the first prism 811 of the TIR prism809 enters into the mirror device 814 housed in the package 813. Thelight reflected from and also modulated by the mirror element of themirror device 814 re-enters the TIR prism 809 and transmits through thesecond prism 812 of the TIR prism 809. Then, the transmitted light isprojected onto the screen 817 through the projection lens 816.

In the optical transmission system as described, the light sourcecontrol unit 802 of the processor 810 controls the intensity of light ofthe light source according to the image signal data received from theimage signal input unit 818. Further, the motor control unit 808 iscontrolled according to the image signal data. The color wheel driveunit 807 is controlled by the motor control unit 808. Further, the colorwheel drive unit 807 controls the change over of the filters of thecolor wheel 806. Furthermore, the SLM control unit 815 controls aplurality of light modulation elements of the mirror device 814according to the image signal data.

The single-plate projection apparatus 800 configured as described abovedivides a period for displaying one image (i.e., one frame) intosub-frames corresponding to the individual wavelengths of light. Thelength of each sub-frame for display an image pixel is defined inrelation to the respective wavelengths of light, e.g., the sub-frame fordisplaying an image pixel having a wavelength corresponding to red,green and blue. Further, the light of each wavelength is illuminatedonto the mirror device 814 in accordance with a period of eachsub-frame. Under the circumstance, the period of each sub-frame, theperiod of modulating the light of each wavelength at the mirror device814 and the period of changing over a filter of the color wheel 806 aremutually synchronized and dependent. A selective reflection of theincident light at the mirror device 814 enables only the light of theindividual wavelength reflected onto the projection light to beprojected onto the screen. Further, sequential projections of lights ofthe individual wavelengths in accordance with the respective sub-frameperiods enables a projection of a color image.

The following descriptions are provided to explain an exemplaryembodiment of a multi-plate projection apparatus which comprises aplurality of mirror devices implemented with mirror elements asdescribed in the above preferred embodiments. The multi-plate projectionapparatus comprises a plurality of light sources, a plurality of mirrordevices and a projection lens.

The light source may preferably be a laser light source or a lightemitting diode (LED). A plurality of independently controllable laserlight sources may be implemented. The independent control of each lightsource eliminates a need to apply a color filter by turning on and off alaser light source having a prescribed wavelength. The use of a laserlight source enables a pulse emission for light intensity control, whichhas been difficult to achieve with a mercury lamp.

The following descriptions explain the configurations and principles ofa two-plate projection apparatus and three-plate projection apparatus,as examples of multi-plate projection apparatus comprising mirrordevices according to the embodiments described in this invention.

<Two-Plate Projection Apparatus>

The two-plate projection apparatus is configured to include two mirrordevices to respond to two groups of light sources, respectively.Specifically, one mirror device modulates the light form one group oflight source and another mirror device modulates the light from anothergroup of light source. Then, each of the mirror devices synthesizes thereflected and modulated light for projecting a combined image.

As an example, when projecting an image with the lights of wavelengthscorresponding to three colors, i.e., red light, green light and bluelight, the high visibility green light is modulated by one mirrordevice, and red and blue lights are modulated by another mirror devicein sequence or simultaneously, and then the light modulated by the thesetwo mirror devices are synthesized to project a combined image onto ascreen.

FIGS. 9A through 9D are functional block diagrams of a two-plateprojection apparatus implemented with two mirror devices housed in onepackage.

The projection apparatus 900 shown in FIGS. 9A through 9D comprises agreen laser light source 901, a red laser light source 902, a blue laserlight source 903, illumination optical systems 904 a and 904 b, twotriangle prisms 906 and 909, two mirror devices 920 and 930. Theseoptical devices are housed in one package 911. The projection apparatusfurther includes a circuit board 908, a joint member 912, a light shieldmember 913, a light guide prism 914 and a projection optical system 923.

The individual light sources 901, 902 and 903 are laser light sources asdescribed for the single-plate system and capable of performing a pulseemission. The light sources may alternatively be implemented by aplurality of sub-laser light sources. The light source may use twomercury lamps corresponding to the respective mirror devices. In thecase of using the mercury lamps, a filter 905 that allows a passage ofonly the light of a specific wavelength while reflecting other light ofwavelengths on the surface of synthesizing the reflection light in aprism 910 described later provides a similar effect as a color filter.Alternately, a light of specific wavelength may be separated by using adichroic prism or dichroic mirror, and thereby the mirror device may beemitted with the light of the separated wavelengths.

The illumination optical systems 904 a and 904 b are optical elementssuch as collector lenses and rod integrators, which have been describedabove for the single-plate projection apparatus, convex lenses orconcave lenses.

The prism 910 that includes and combines two triangle prisms 906 and 909performs the functions of synthesizing the reflection lights from thetwo mirror devices 920 and 930. When the prism 910 synthesizes thereflection lights from the individual mirror devices, a filter 905, suchas a dichroic filter, may be implemented to allow a passage of only thelight of a specific wavelength while reflecting the other light ofwavelengths on the surface of synthesizing the reflection light in aprism 910.

The filter 905 performs the same functions as a color filter because ofthe color filtering function of allowing a passage of only the light ofa specific wavelength while reflecting the other light of wavelengths.Meanwhile, by using a laser light source for emitting the light having aspecific polarization, a polarization light beam splitter film, or apolarization light beam splitter coating may be applied to perform aseparation of light/a synthesis of light based on the difference inpolarization direction of light, may be used for synthesizing areflection light from the prism 910.

The package 911 is similar to the package described for the single-plateprojection apparatus. The package 911 shown in FIGS. 9A through 9D isconfigured to contain two mirror devices 920 and 930 within one package911. Alternatively, the mirror devices 920 and 930 may also be housed inseparate packages.

FIGS. 9A through 9D show the mirror arrays 921 and 931, and devicesubstrates 922 and 932, of the respective mirror devices 920 and 930.

The circuit board 908 is connected to a processor similar to theprocessor described for the single-plate projection apparatus describedabove. The processor comprises a SLM control unit and a light sourcecontrol unit. Further, the processor processes the input image signaldata and transmits the processed data to the SLM control unit and lightsource control unit. The SLM control unit and light source control unitcontrol the mirror device and light source respectively by through thecircuits on the circuit board 908 applying the processed datatransmitted from the processor.

The mirror device is controlled and synchronized with the light source.

The input of the image signal data to the processor and other functionscarried out by the image display system have been described for thesingle-plate projection apparatus and therefore the description is notprovided here.

The joint member 912 provides the function of joining the prism 910 tothe package 911. A material used for the joint member 912 includes afritted glass in an exemplary embodiment of this invention.

The light shield member 913 performs the function of shielding theunnecessary light. In an exemplary embodiment, the light shield member913 may be formed with graphite or a similar kind of material. Theprojection apparatus 900 shown in FIGS. 9A through 9D includes the lightshield member 913 formed on a part of the bottom of the prism 910 andalso on the rear surface of the prism 910.

The light guide prism 914 is a right-angle triangle cone prism thatincludes a slope face adhesively attached to the front face of the prism910 and the bottom of the light guide prism 914 facing upward. The lightguide prism 914 is configured to have the optical axis of the individuallight sources 901, 902 and 903, and the optical axis of the illuminationoptical systems 904 a and 904 b corresponding to the respective lightsources and the optical axis of the light emitted from the individuallight sources 901, 902 and 903 are respectively perpendicular to thebottom of the light guide prism 914. This configuration provides anorientation for aligning the optical system that the lights emitted fromthe individual light sources 901, 902 and 903 are projected alongorthogonal directions to the light guide prism 914 and prism 910. As aresult, the lights emitted from the individual light sources 901, 902and 903 to project onto the light guide prism 914 and prism 910 haveincreased light transmission on the incidence surfaces of the lightguide prism 914 and prism 910.

The projection optical system 923 is an optical element for projectingan image onto the screen in an exemplary embodiment, the projectionoptical system may include a projection lens for enlarging the imagesfor projecting an image onto the screen or an image display surface.

By using a light source emitting polarized light and a polarization beamsplitter film, a two-plate projection apparatus can be configured bydisposing a ½ wavelength plate or ¼ wavelength plate on the bottomsurface of the prism 910.

The following descriptions provide further explanations of the principleof projection of the two-plate projection apparatus 900 by referring toFIGS. 9A through 9D.

The projection apparatus 900 includes a light source for projecting agreen laser light 915 from the front direction of the prism 910, andsequentially projecting the red laser light 916 or blue laser light 917in a time division. The green laser light 915 and red laser light 916 orblue laser light 917 are reflected by the mirror devices 920 and 930 tothe inclined surface of the prism 910. Then, the green laser light 915and the red laser light 916 or blue laser light 917 reflected to theinclined surface side of the prism 910 are synthesized and the image isprojected on the screen by way of the projection optical system 923.

The following description describing the projection of the individuallaser lights 915, 916 and 917 from the front direction of the prism 910followed by two mirror devices 920 and 930 reflect the laser lights 915,916 and 917 to the inclined surface direction of the prism 910.

The green laser light 915 and the red laser light 916 or blue laserlight 917 are projected respectively from the green laser light source901 and the red laser light source 902 or blue laser light source 903.The green laser light 915 and the red laser light 916 or blue laserlight 917 are transmitted through the illumination optical systems 904 aand 904 b to and through the light guide prism 914 to enter into theprism 910. Then, the green laser light 915 and the red or blue laserlight 916 or 917 are transmitted in the prism 910 and projected into thepackage 911 and projected onto the bottom surface of the prism 910.

After passing through the package 911, the green laser light 915 and thered or blue laser lights 916 or 917 enter into two mirror devices 920and 930 housed in a single package 911 correspond to the individuallaser lights 915, 916 and 917. The lights are modulated at therespective mirror devices 920 and 930 and the individual laser lights915, 916 and 917 are reflected to the inclined surface direction of theprism 910.

The following description describes the projection paths of theindividual laser lights 915, 916 and 917 at the respective mirrordevices 920 and 930 until the projection of an image as illustrated inthe two-plate projection apparatus 900 shown in FIG. 9B. A green laserON light 918 and a red or blue laser ON light 919 are reflected bymirror 920 and 930 respectively toward the rear surface of the prism 910in the ON state. These lights are re-transmitted through the package 911then entering into the prism 910. Then, the green laser ON light 918 andthe red or blue laser ON light 919 are reflected respectively on theinclined surface of the prism 910. Then, the green laser ON light 918 isreflected again on the film 905 for transmitting only a light of aspecific wavelength while reflecting the light of other wavelengths.Meanwhile, the red or blue laser ON light 919 is transmitted through thefilm 905. Then, the green laser light 918 and the red or blue laserlight 919 are synthesized when projected onto the same optical path andis incident together to the projection optical system 923 to display acolor. Note that the optical axes of the respective ON lights 918 and919 for projecting to the projection optical system 923 from the prism910 are preferably perpendicular to the emission surface of the prism910.

FIG. 9C is a side cross sectional view for showing a two-plateprojection apparatus that includes two mirror devices described above.

The green laser light 915 projected from the green laser light source901 enters into the light guide prism 914 along a perpendiculardirection through the illumination optical system 904 a. After the greenlight 915 transmits through the light guide prism 914, the green laserlight 915 is projected through the prism 910 joined with the light guideprism 914 and enters the mirror array 921 of the mirror device 920housed in the package 911.

The mirror array 921 reflects the incident green laser light 915 alongthe deflection angles of the mirror of the control states. The controlstates of the mirrors may include the ON state in which the entirereflection light enters the projection optical system 923, theintermediate light state in which a portion of the reflection lightenters the projection optical system 923 and the OFF light state inwhich none of the reflection light enters the projection optical system923. A green laser light 924 projected during an ON light state whenreflected on the mirror array 921 for projecting the entire light toenter the projection optical system 923. Meanwhile, a laser light 925projected during the intermediate state when reflected on the mirrorarray 921 for projecting a portion of the light to enter into theprojection optical system 923.

Further, a laser light 926 projected during the OFF light is reflectedby the mirror array 921 toward the light shield layer 913 formed on therear surface of the prism 910. The reflected laser light 926 is absorbedin a light shield layer 913. The green laser lights are projected with amaximum light intensity during an ON state, with a partial lightintensity at an intermediate state between the ON light and OFF lightstates of the modulating mirror device, or projecting minimum lightintensity, e.g., a zero light intensity during an OFF light state. Bycontrolling the deflection angle of the mirror to operate and projectlight to the display optical path between the ON light state and OFFlight state provides the flexibility for a mirror device to operate inan intermediate light state. Further, as the mirrors are controlled tofreely oscillate and repeatedly passing through a range of deflectionangles to project a portion of light to the image display optical systemfurther provides an option to operate the mirror device in anintermediate state. By the number of free oscillations during apredetermined period provide a measure of controlling and adjustingintensity of light incident to the projection optical system 923. Theprojection of a light intensity in the intermediate state enables theimage display system to project the images with a gray scale of highergray scale resolution. Similar processes may also be carried out for thered and blue laser light sources 902 and 903 respectively on the reversesurface as that carried out for the green laser light source.

FIG. 9D is a top view of a two-plate projection apparatus comprising twomirror devices according to the present embodiment.

The light of an OFF light state is absorbed by the light shield layer913 on the backend of the system and not reflected on the inclinedsurface of the prism 910 by placing the individual mirror devices 920and 930 with an orientation having a 45-degree angle relative to thefour sides of the outer circumference of the package 911 and on the samehorizontal plane as shown in FIG. 9D.

<Three-Plate Projection Apparatus>

The following description explains the device configuration andoperational processes of a three-plate projection apparatus. Thethree-plate projection apparatus includes three mirror devices torespond to respective lights projected from three groups of lightsources. The apparatus further includes individual mirror devices tomodulate the individual lights emitted from the respective lightsources. Then, the apparatus synthesizes the individual lights afterthese lights re modulated by the respective mirror devices to project animage.

In an exemplary embodiment, an image projected with the lights of threecolors, i.e., red light, green light and blue light, the individuallights are continuously modulated by the respective mirror devices. Theindividual lights modulated by the respective mirror devices aresynthesized, for projecting a color image.

FIG. 10 is a functional block diagram for showing a three-plateprojection apparatus that includes three mirror devices housed inrespective packages according to the present embodiment.

The projection apparatus 1000 shown in FIG. 10 comprises a light source1001, a first condenser lens 1002, a rod integrator 1003, a secondcondenser lens 1004, a third condenser lens 1005, a TIR prism 1008, afirst dichroic prism 1009, a second dichroic prism 1010, a third prism1011, individual mirror devices 1012, 1013 and 1014. The projectionapparatus further includes individual packages 1015, 1016 and 1017 forhousing and containing the respective mirror devices 1012, 1013 and1014, and a projection lens 1018.

The light source 1001 may be implemented with a mercury lamp source, alaser light source, an LED, or the like, as in the case of the lightsource described for the single-plate projection apparatus and two-plateprojection apparatus as describe above. The configuration and operationof the light source, such as the sub-light sources and light sourceswith pulse emission, are similar to the light sources for the projectionapparatuses described above and therefore the descriptions are notrepeated here.

Similar to those described for the single-plate projection apparatus,the first condenser lens 1002, rod integrator 1003, second condenserlens 1004 and third condenser lens 1005 perform the function ofcondensing the light. Meanwhile, the rod integrator 1003 performs afunction of projecting a light with more a uniform intensity.

The TIR prism 1008 is similar to the prism described above for thesingle-plate projection apparatus and therefore the description will notbe repeated here. Note that the TIR prism 1008 used for the three-plateprojection apparatus shown in FIG. 10 includes a first prism 1006 and asecond prism 1007.

The first dichroic prism 1009 and second dichroic prism 1010 are prismsthat allow only the light of a specific wavelength to transmit throughwhile reflecting the light of other wavelengths. Further, the thirdprism 1011 is a common prism. Note that the first dichroic prism 1009and second dichroic prism 1010 may be configured by respectiveindividual dichroic mirrors.

In the exemplary embodiment, FIG. 10 shows the case of configuring thefirst dichroic prism 1009 as a prism for reflecting only the light ofthe wavelength equivalent to red while transmitting the light of otherwavelengths therethrough and the second dichroic prism 1010 as a prismreflecting only the light of the wavelength equivalent to blue whiletransmitting the light of other wavelengths therethrough. Further, FIG.10 shows the case of configuring the third prism 1011 as a prism toproject the light of the wavelength equivalent to a green wavelengthalong a straight-line direction.

The individual packages 1015, 1016 and 1017 house the respective mirrordevices 1012, 1013 and 1014. The projection lens 1018 carries out afunction of enlarging the individual lights for synthesis after theindividual lights are reflected and modulated at the respective mirrordevices 1012, 1013 and 1014. A processor 1020 is basically similar tothe one described above for the single plate projection apparatus, andcomprises a spatial light modulator control unit 1021 and a light sourcecontrol unit 1022. Further, the processor 1020 processes the input imagesignal data as described for the single plate projection apparatus.

The spatial light modulator control unit 1021 is basically similar tothe one described for the single plate projection apparatus. The SLMcontrol unit 1021 is connected to the individual mirror devices 1012,1013 and 1014. Further, the spatial light modulator control unit 1021controls the individual mirror devices 1012, 1013 and 1014 independentlyand synchronously by applying the image signal data processed by theprocessor. is the SLM control unit further controls the individualmirror devices 1012, 1013 and 1014 synchronously to function in acoordinate manner with other control and optical functional units of theimage projection apparatus.

The light source control unit 1022, is similar to the one described forthe single plate projection apparatus and is connected to the lightsource 1001 to control the light intensity of the light source includingthe function of controlling the number of sub-light sources to turn onor similar functions according to the image signal processed by theprocessor.

The descriptions for the frame memory 1023 and an image signal inputunit 1024 are similar to the ones described for the single plateprojection apparatus and therefore the description will not be repeatedhere.

The following description explains the optical functions and operationalprocesses of the projection of a color image for the three-plateprojection apparatus 1000 shown in FIG. 10.

In the three-plate projection apparatus 1000, the light projected fromthe light source 1001 is transmitted sequentially through the firstcondenser lens 1002, rod integrator 1003, second condenser lens 1004,third condenser lens 1005 to project to the first prism 1006 of the TIRprism 1008 at a critical angle or along a direction having a largerincident angle. Then, the incident light is totally reflected by thefirst prism 1006 of the TIR prism 1008.

The totally reflected light enters the first dichroic prism 1009. Then,on the light emission surface of the first dichroic prism 1009 and/or onthe light incident surface of the second dichroic prism 1010, only thelight of the wavelength equivalent to red, among the totally reflectedlight, is reflected, while the light of other wavelengths are passedthrough.

For the light incident to the second dichroic prism 1010, on the lightemission surface of the second dichroic prism 1010 and/or the lightincident surface of the third prism 1011, only the light of thewavelength equivalent to blue, among the incident light, is reflected,while the light of other wavelengths, that is the light substantiallyequivalent to green, is passed through.

The light of wavelengths equivalent to blue and red after entering intothe third prism 1011 is removed and the light with wavelengthssubstantially equivalent to green travels straight in the third prism1011.

Then, the lights that have special spectral distributions correspondingto individual wavelengths as described above are incident to thepackages 1015, 1016 and 1017, respectively, which house the respectivemirror devices 1012, 1013 and 1014 and which are placed on therespective side faces of the first dichroic prism 1009, second dichroicprism 1010 and third prism 1011.

The individual lights transmitted through the packages 1015, 1016 and1017 then enter into respective mirror devices 1012, 1013 and 1014 ofthe present embodiment. Here, the individual mirror devices 1012, 1013and 1014 are mutually independently controlled by the spatial lightmodulator control unit 1021 in response to the respective lightsaccording to the image signal processed by the processor 1020. Theindividual mirror devices 1012, 1013 and 1014 modulate, and then reflecteach of the respective incident lights.

Then, the light equivalent to the wavelength of red reflected by themirror device 1012, re-enters the first dichroic prism 1009. Also, thelight equivalent to the wavelength of blue reflected by the mirrordevice 1014, re-enters the second dichroic prism 1010. Further, thelight equivalent to the wavelength of green reflected by the mirrordevice 1013, re-enters the third prism 1011.

The light equivalent to the wavelength of red re-entered into the firstdichroic prism 1009, and the light equivalent to the wavelength of bluere-entered into the second dichroic prism 1010 then repeat some numbersof reflections in the respective prisms 1009 and 1010.

Then, the light equivalent to the wavelength of blue is projected alongan overlapping optical path with that of the light equivalent to thewavelength of green, which has re-entered the second dichroic prism 1010from the third prism 1011. The lights have overlapping optical path arethereby synthesized.

Then, the light synthesized with the wavelengths equivalent to green andblue enters the first dichroic prism 1009 from the second dichroic prism1010.

Then, the light equivalent to the wavelength of red is projected alongan overlapping optical path with that of the light equivalent to thewavelengths of green and blue, which has entered the first dichroicprism 1009 from the second dichroic prism 1010. The lights haveoverlapping optical path are thereby synthesized.

The light synthesized from the individual lights modulated by therespective mirror devices 1012, 1013 and 1014 enters the second prism1007 of the TIR prism 1008 at the critical angle or along a directionhave a smaller incline angle than the critical angle.

Then, the synthesized light is transmitted through the second prism 1007of the TIR prism 1008 and is projected to the screen 1019 by way of theprojection lens 1018. With optical transmissions projected through theabove-described optical paths, a color image is projected at thethree-plate projection apparatus.

In the exemplary configuration, when compared to the single-plate imagedisplay system described above, there will be no visual problems such asthe so-called color breakup since each light of the primary colors isdisplayed at all times. Furthermore, effective use of emitted light fromthe light source projects a bright image displayed with a higher lightintensity.

Although the present invention has been described in terms of thepresently preferred embodiment, it is to be understood that suchdisclosure is not to be interpreted as limiting. Various alternationsand modifications will no doubt become apparent to those skilled in theart after reading the above disclosure. Accordingly, it is intended thatthe appended claims be interpreted as covering all alternations andmodifications as fall within the true spirit and scope of the invention.

1. A mirror device, comprising: an electrode which is covered with aprotective film made of a material containing a semiconductor materialand is placed on a substrate; a mirror placed above the electrode; andan electrically conductive hinge placed between the mirror and theelectrode, wherein an opening part is formed in a part of the protectivefilm, and the hinge penetrates the protective film in the opening partthereof.
 2. The mirror device according to claim 1, wherein: theprotective film is made of any of poly-silicon, amorphous silicon andsilicon carbide (SiC).
 3. The mirror device according to claim 1,wherein: the protective film is constituted by a plurality of layerscontaining a silicon (Si) material.
 4. The mirror device according toclaim 1, wherein: the thickness of the protective film is between 500angstroms and 3000 angstroms.
 5. The mirror device according to claim 1,wherein: the resistance value of the protective film is a higher thanthat of the hinge.
 6. The mirror device according to claim 1, wherein:the hinge is connected to the electrode beneath the protective film. 7.The mirror device according to claim 1, wherein: the height of theelectrode from the substrate is the same as, or larger than, the heightof a part of the hinge projected from the cavity of the electrode.
 8. Amirror device, comprising: an electrode placed on a substrate; aprotective film formed on the electrode; a mirror placed above theelectrode; and a hinge which is joined to the electrode and is made of asemiconductor material, wherein the electrical resistance of the hingeis lower than that of the protective film.
 9. The mirror deviceaccording to claim 8, wherein: the hinge is made of any of singlecrystal silicon (Si), poly-silicon and amorphous silicon, which containan additive selecting from among the materials belonging to the IIIgroup or V group.
 10. The mirror device according to claim 8, wherein:the protective film is made of any of poly-silicon, amorphous siliconand silicon carbide (SiC).
 11. The mirror device according to claim 8,wherein: the hinge is made of a silicon material in which a metal isdiffused.
 12. The mirror device according to claim 8, wherein: the hingeand the protective film mutually contain the same material.
 13. Themirror device according to claim 8, wherein: the hinge or protectivefilm is connected to the ground (GND).
 14. The mirror device accordingto claim 8, further comprising: an insulation layer or an air gappositioned between the hinge and the protective film.
 15. The mirrordevice according to claim 8, wherein: the resistance of the hinge is nomore than 1 GΩ.
 16. The mirror device according to claim 8, wherein: theresistance of the hinge is no more than 500MΩ.
 17. The mirror deviceaccording to claim 8, wherein: a light-shield or stiction-preventingcoating is deposited on the protective film surface so as to notinfluence the resistance value of the hinge.
 18. A mirror device,comprising: an electrode placed on a substrate; a plurality of mirrorsarranged in array above the electrode; a protective film formed on thesubstrate; and a hinge which is placed between the mirror and theelectrode and is made of a semiconductor material, wherein the hinge ismade of any of single crystal silicon (Si), poly-silicon and amorphoussilicon, which contain an additive of phosphorous, boron or arsenic, andthe reflection region of the mirror occupies no less than 85% of aregion in which the mirrors are arranged in array.
 19. The mirror deviceaccording to claim 18, wherein: the hinge is a vertical hinge, and theheight of the hinge is no more than one half of the distance between themirror and the substrate.
 20. The mirror device according to claim 18,wherein: the hinge and the protective film mutually contain the samematerial.
 21. The mirror device according to claim 18, wherein: theresistance of the hinge is approximately 1 GΩ or lower.
 22. The mirrordevice according to claim 18, wherein: the resistance of the hinge isapproximately 500MΩ or lower.
 23. The mirror device according to claim18, wherein: the mirror is connected to the ground (GND) by way of thehinge.
 24. The mirror device according to claim 18, wherein: thethickness of the hinge is no more than 500 angstroms.
 25. The mirrordevice according to claim 18, wherein: the hinge is a torsion hingeplaced approximately in parallel to the substrate.
 26. The mirror deviceaccording to claim 18, further comprising: a mirror connection partbetween the mirror and the hinge, wherein the resistance of the mirrorconnection part is approximately the same as that of the hinge ormirror.
 27. The mirror device according to claim 18, further comprising:a mirror connection part between the mirror and the hinge, wherein themirror connection part and the hinge contain the same material.
 28. Themirror device according to claim 18, further comprising: a mirrorconnection part between the mirror and the hinge, wherein the resistancevalue of the mirror connection part is smaller than that of theprotective film.
 29. A projection apparatus, comprising: a mirror devicenoted in claim 18; a light source for emitting an illumination light tothe mirror in claim 18; and a projection optical system for projectinglight reflected by the mirror device.